Abstract

Thin films doped with rare-earth ions often suffer from poor crystallinity and low up-conversion quantum yield (UCQY), limiting their use in photonic and energy-conversion devices. Nd3+ ions remain particularly underexplored when doped in thin-film, with no established route for achieving efficient visible up-conversion (UC). Here, we develop an aerosol-assisted chemical vapor deposition (AACVD) process operated at atmospheric pressure to fabricate Nd3+ ZnO thin films on Si(111). Read More